STL56N3LLH5 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 56A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 7.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +22V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Відгуки про товар
Написати відгук
Технічний опис STL56N3LLH5 STMicroelectronics
Description: MOSFET N-CH 30V 56A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 7.5A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +22V, -20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V.
Інші пропозиції STL56N3LLH5 за ціною від 24.04 грн до 92.82 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STL56N3LLH5 | STMicroelectronics |
Description: MOSFET N-CH 30V 56A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 7.5A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +22V, -20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V |
на замовлення 3949 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
STL56N3LLH5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 56A; Idm: 224A; 62.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 56A Pulsed drain current: 224A Power dissipation: 62.5W Case: PowerFLAT 5x6 On-state resistance: 9mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1994 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
|
STL56N3LLH5 | STMicroelectronics |
MOSFETs N-Channel 30V 15A 0.0076 Ohm STripFET |
на замовлення 14956 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| STL56N3LLH5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 56A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 7.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +22V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Description: MOSFET N-CH 30V 56A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 7.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +22V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
на замовлення 3949 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 89.16 грн |
| 10+ | 54.45 грн |
| 100+ | 36.07 грн |
| 500+ | 26.43 грн |
| 1000+ | 24.04 грн |
| STL56N3LLH5 |
![]() |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 56A; Idm: 224A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 62.5W
Case: PowerFLAT 5x6
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 56A; Idm: 224A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 62.5W
Case: PowerFLAT 5x6
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1994 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 92.82 грн |
| 10+ | 54.31 грн |
| 100+ | 35.81 грн |
| 500+ | 28.03 грн |
| 1000+ | 25.52 грн |
| STL56N3LLH5 |
![]() |
Виробник: STMicroelectronics
MOSFETs N-Channel 30V 15A 0.0076 Ohm STripFET
MOSFETs N-Channel 30V 15A 0.0076 Ohm STripFET
на замовлення 14956 шт:
термін постачання 21-30 дні (днів)




