STL58N3LLH5 STMicroelectronics
Виробник: STMicroelectronicsDescription: MOSFET N-CH 30V 64A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 7.5A, 10V
Power Dissipation (Max): 4.8W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +22V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 38.97 грн |
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Технічний опис STL58N3LLH5 STMicroelectronics
Description: MOSFET N-CH 30V 64A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 7.5A, 10V, Power Dissipation (Max): 4.8W (Ta), 62.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +22V, -20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції STL58N3LLH5 за ціною від 37.93 грн до 145.61 грн
| Фото | Назва | Виробник | Інформація |
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STL58N3LLH5 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 30V 64A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 7.5A, 10V Power Dissipation (Max): 4.8W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +22V, -20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5455 шт: термін постачання 21-31 дні (днів) |
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STL58N3LLH5 | Виробник : STMicroelectronics |
MOSFETs Automotive N-channel 30 V, 0.0076 Ohm, 56 A STripFET H5 Power MOSFET in a PowerF |
на замовлення 5036 шт: термін постачання 21-30 дні (днів) |
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| STL58N3LLH5 | Виробник : STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 64A; Idm: 224A; 62.5W Mounting: SMD Drain-source voltage: 30V Power dissipation: 62.5W Drain current: 64A Pulsed drain current: 224A Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET Case: PowerFLAT 5x6 Kind of package: reel; tape Polarisation: unipolar Gate charge: 6.5nC On-state resistance: 9mΩ |
товару немає в наявності |
