STL66DN3LLH5 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 30V 78.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 72W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 78.5A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 190.67 грн |
| 10+ | 118.24 грн |
| 50+ | 89.96 грн |
| 100+ | 75.86 грн |
| 500+ | 60.84 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
21-31 дні (днів)
Мінімальна партія:
2 шт
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Технічний опис STL66DN3LLH5 STMicroelectronics
Description: MOSFET 2N-CH 30V 78.5A POWERFLAT, Part Status: Active, Supplier Device Package: PowerFlat™ (5x6), Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V, Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 78.5A, Drain to Source Voltage (Vdss): 30V, Power - Max: 72W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції STL66DN3LLH5
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
STL66DN3LLH5 | STMicroelectronics |
Description: MOSFET 2N-CH 30V 78.5A POWERFLAT Part Status: Active Supplier Device Package: PowerFlat™ (5x6) Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Current - Continuous Drain (Id) @ 25°C: 78.5A Drain to Source Voltage (Vdss): 30V Power - Max: 72W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
 |
STL66DN3LLH5 | STMicroelectronics |
MOSFETs Dual N-Ch 5.9mOhm 30V 20A STripFET V |
товару немає в наявності |
В кошику од. на суму грн. |
| STL66DN3LLH5 | STMicroelectronics |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 78.5A; Idm: 80A; 72W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 78.5A Pulsed drain current: 80A Power dissipation: 72W Case: PowerFLAT 5x6 Gate-source voltage: ±22V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| STL66DN3LLH5 |
|
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 30V 78.5A POWERFLAT
Part Status: Active
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 78.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 72W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET 2N-CH 30V 78.5A POWERFLAT
Part Status: Active
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 78.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 72W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| STL66DN3LLH5 |
|
Виробник: STMicroelectronics
MOSFETs Dual N-Ch 5.9mOhm 30V 20A STripFET V
MOSFETs Dual N-Ch 5.9mOhm 30V 20A STripFET V
товару немає в наявності
В кошику
од. на суму грн.
| STL66DN3LLH5 |
|
Виробник: STMicroelectronics
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 78.5A; Idm: 80A; 72W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 78.5A
Pulsed drain current: 80A
Power dissipation: 72W
Case: PowerFLAT 5x6
Gate-source voltage: ±22V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 78.5A; Idm: 80A; 72W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 78.5A
Pulsed drain current: 80A
Power dissipation: 72W
Case: PowerFLAT 5x6
Gate-source voltage: ±22V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.