STL7DN6LF3 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 60V 20A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 432pF @ 25V
Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 51.94 грн |
| 6000+ | 46.92 грн |
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Технічний опис STL7DN6LF3 STMicroelectronics
Description: STMICROELECTRONICS - STL7DN6LF3 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 20 A, 20 A, 0.043 ohm, tariffCode: 85412900, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 20A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: N, Drain-Source-Spannung Vds, p-Kanal: 60V, MSL: MSL 1 - unbegrenzt, Dauer-Drainstrom Id, n-Kanal: 20A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: 52W, Drain-Source-Spannung Vds, n-Kanal: 60V, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: PowerFLAT, Anzahl der Pins: 8Pin(s), Produktpalette: STripFET F3 Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.043ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 52W, Betriebstemperatur, max.: 175°C.
Інші пропозиції STL7DN6LF3 за ціною від 52.88 грн до 186.14 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STL7DN6LF3 | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STL7DN6LF3 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 20 A, 20 A, 0.043 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 52W Drain-Source-Spannung Vds, n-Kanal: 60V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PowerFLAT Anzahl der Pins: 8Pin(s) Produktpalette: STripFET F3 Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.043ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 52W Betriebstemperatur, max.: 175°C |
на замовлення 2245 шт: термін постачання 21-31 дні (днів) |
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STL7DN6LF3 | STMicroelectronics |
Description: MOSFET 2N-CH 60V 20A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 52W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 432pF @ 25V Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8143 шт: термін постачання 21-31 дні (днів) |
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STL7DN6LF3 | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STL7DN6LF3 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 20 A, 20 A, 0.043 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 52W Drain-Source-Spannung Vds, n-Kanal: 60V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PowerFLAT Anzahl der Pins: 8Pin(s) Produktpalette: STripFET F3 Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.043ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 52W Betriebstemperatur, max.: 175°C |
на замовлення 2245 шт: термін постачання 21-31 дні (днів) |
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STL7DN6LF3 | STMicroelectronics |
MOSFETs Dual N-Ch 60V 35mOhm 6.5A STripFET III |
на замовлення 5789 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| STL7DN6LF3 |
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Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - STL7DN6LF3 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 20 A, 20 A, 0.043 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 20A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 52W
Drain-Source-Spannung Vds, n-Kanal: 60V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PowerFLAT
Anzahl der Pins: 8Pin(s)
Produktpalette: STripFET F3 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.043ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 52W
Betriebstemperatur, max.: 175°C
Description: STMICROELECTRONICS - STL7DN6LF3 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 20 A, 20 A, 0.043 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 20A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 52W
Drain-Source-Spannung Vds, n-Kanal: 60V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PowerFLAT
Anzahl der Pins: 8Pin(s)
Produktpalette: STripFET F3 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.043ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 52W
Betriebstemperatur, max.: 175°C
на замовлення 2245 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 96.73 грн |
| 500+ | 74.87 грн |
| 1000+ | 63.82 грн |
| STL7DN6LF3 |
|
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 60V 20A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 432pF @ 25V
Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 20A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 432pF @ 25V
Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8143 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 179.49 грн |
| 10+ | 111.26 грн |
| 100+ | 76.05 грн |
| 500+ | 57.24 грн |
| 1000+ | 52.88 грн |
| STL7DN6LF3 |
|
Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - STL7DN6LF3 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 20 A, 20 A, 0.043 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 20A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 52W
Drain-Source-Spannung Vds, n-Kanal: 60V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PowerFLAT
Anzahl der Pins: 8Pin(s)
Produktpalette: STripFET F3 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.043ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 52W
Betriebstemperatur, max.: 175°C
Description: STMICROELECTRONICS - STL7DN6LF3 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 20 A, 20 A, 0.043 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 20A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 52W
Drain-Source-Spannung Vds, n-Kanal: 60V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PowerFLAT
Anzahl der Pins: 8Pin(s)
Produktpalette: STripFET F3 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.043ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 52W
Betriebstemperatur, max.: 175°C
на замовлення 2245 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 186.14 грн |
| 10+ | 127.62 грн |
| 100+ | 96.73 грн |
| 500+ | 74.87 грн |
| 1000+ | 63.82 грн |
| STL7DN6LF3 |
|
Виробник: STMicroelectronics
MOSFETs Dual N-Ch 60V 35mOhm 6.5A STripFET III
MOSFETs Dual N-Ch 60V 35mOhm 6.5A STripFET III
на замовлення 5789 шт:
термін постачання 21-30 дні (днів)