STL7LN80K5 STMicroelectronics
на замовлення 2334 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 214.52 грн |
| 10+ | 136.62 грн |
| 100+ | 85.51 грн |
| 500+ | 69.62 грн |
| 1000+ | 61.52 грн |
| 3000+ | 56.45 грн |
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Технічний опис STL7LN80K5 STMicroelectronics
Description: MOSFET N-CH 800V 5A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: PowerFlat™ (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V.
Інші пропозиції STL7LN80K5
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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STL7LN80K5 | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 800V 5A 8-Pin Power Flat EP T/R |
товару немає в наявності |
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STL7LN80K5 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 800V 5A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V |
товару немає в наявності |
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STL7LN80K5 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 800V 5A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V |
товару немає в наявності |