Технічний опис STL86N3LLH6AG STMicroelectronics
Description: MOSFET N-CH 30V 80A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 10.5A, 10V, Power Dissipation (Max): 4W (Ta), 60W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції STL86N3LLH6AG
| Фото | Назва | Виробник | Інформація |
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Ціна |
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| STL86N3LLH6AG | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 30V 80A Automotive 8-Pin Power Flat EP T/R |
товару немає в наявності |
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| STL86N3LLH6AG | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 60W; Automotive Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 320A Power dissipation: 60W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Version: Automotive кількість в упаковці: 1 шт |
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STL86N3LLH6AG | Виробник : STMicroelectronics |
Description: MOSFET N-CH 30V 80A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 10.5A, 10V Power Dissipation (Max): 4W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
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STL86N3LLH6AG | Виробник : STMicroelectronics |
Description: MOSFET N-CH 30V 80A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 10.5A, 10V Power Dissipation (Max): 4W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
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STL86N3LLH6AG | Виробник : STMicroelectronics |
MOSFETs Automotive-grade N-channel 30 V, 4 mOhm typ 80 A STripFET H6 Power MOSFET |
товару немає в наявності |
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| STL86N3LLH6AG | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 60W; Automotive Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 320A Power dissipation: 60W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Version: Automotive |
товару немає в наявності |