STL8DN10LF3 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 100V 20A POWERFLAT
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 20A
Drain to Source Voltage (Vdss): 100V
Power - Max: 70W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
| Кількість | Ціна |
|---|---|
| 2+ | 186.62 грн |
| 10+ | 125.72 грн |
| 100+ | 88.99 грн |
| 500+ | 68.80 грн |
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Технічний опис STL8DN10LF3 STMicroelectronics
Description: MOSFET 2N-CH 100V 20A POWERFLAT, Drain to Source Voltage (Vdss): 100V, Power - Max: 70W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Supplier Device Package: PowerFlat™ (5x6), Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V, Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 20A, Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції STL8DN10LF3 за ціною від 53.04 грн до 198.41 грн
| Фото | Назва | Виробник | Інформація |
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STL8DN10LF3 | Виробник : STMicroelectronics |
MOSFETs Dual N-Ch 100V 7.8A 25mOhm STripFET III |
на замовлення 5856 шт: термін постачання 21-30 дні (днів) |
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STL8DN10LF3 | Виробник : STMicroelectronics |
Trans MOSFET N-CH 100V 20A 8-Pin Power Flat EP T/R Automotive AEC-Q101 |
товару немає в наявності |
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STL8DN10LF3 | Виробник : STMicroelectronics |
Description: MOSFET 2N-CH 100V 20A POWERFLATDrain to Source Voltage (Vdss): 100V Power - Max: 70W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Supplier Device Package: PowerFlat™ (5x6) Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 25V Current - Continuous Drain (Id) @ 25°C: 20A Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
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| STL8DN10LF3 | Виробник : STMicroelectronics |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 100V; 20A; Idm: 31.2A; 70W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Pulsed drain current: 31.2A Power dissipation: 70W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 20.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |

