STL8N6LF6AG STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 32A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V
Power Dissipation (Max): 4.8W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 25 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 3000+ | 38.39 грн |
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Технічний опис STL8N6LF6AG STMicroelectronics
Description: MOSFET N-CH 60V 32A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V, Power Dissipation (Max): 4.8W (Ta), 55W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції STL8N6LF6AG за ціною від 39.27 грн до 139.15 грн
| Фото | Назва | Виробник | Інформація |
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STL8N6LF6AG | Виробник : STMicroelectronics |
Trans MOSFET N-CH 60V 32A 8-Pin Power Flat EP T/R Automotive AEC-Q101 |
на замовлення 2970 шт: термін постачання 21-31 дні (днів) |
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STL8N6LF6AG | Виробник : STMicroelectronics |
Description: MOSFET N-CH 60V 32A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V Power Dissipation (Max): 4.8W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 4070 шт: термін постачання 21-31 дні (днів) |
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STL8N6LF6AG | Виробник : STMicroelectronics |
Trans MOSFET N-CH 60V 32A 8-Pin Power Flat EP T/R Automotive AEC-Q101 |
товару немає в наявності |
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STL8N6LF6AG | Виробник : STMicroelectronics |
MOSFETs Automotive-grade N-channel 60 V, 21 mOhm typ., 32 A STripFET F6 Power MOSFET in |
товару немає в наявності |
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| STL8N6LF6AG | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 32A; Idm: 128A; 55W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 32A Pulsed drain current: 128A Power dissipation: 55W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |