STLD200N4F6AG STMicroelectronics
Виробник: STMicroelectronics
MOSFETs Automotive-grade N-channel 40 V, 1.27 mOhm typ., 120 A STripFET F6 Power MOSFET
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 298.31 грн |
| 10+ | 193.90 грн |
| 100+ | 128.20 грн |
| 500+ | 111.48 грн |
| 1000+ | 107.99 грн |
| 2500+ | 89.88 грн |
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Технічний опис STLD200N4F6AG STMicroelectronics
Description: MOSFET N-CH 40V 120A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 75A, 10V, Power Dissipation (Max): 158W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PowerFlat™ (5x6) Dual Side, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції STLD200N4F6AG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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STLD200N4F6AG | STMicroelectronics |
Description: MOSFET N-CH 40V 120A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 75A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PowerFlat™ (5x6) Dual Side Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
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STLD200N4F6AG | STMicroelectronics |
Description: MOSFET N-CH 40V 120A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 75A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PowerFlat™ (5x6) Dual Side Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
| STLD200N4F6AG |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 120A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 75A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerFlat™ (5x6) Dual Side
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 120A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 75A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerFlat™ (5x6) Dual Side
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| STLD200N4F6AG |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 120A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 75A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerFlat™ (5x6) Dual Side
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 120A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 75A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PowerFlat™ (5x6) Dual Side
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.