STLD200N4F6AG STMicroelectronics
Виробник: STMicroelectronicsMOSFETs Automotive-grade N-channel 40 V, 1.27 mOhm typ 120 A STripFET F6 Power MOSFET
на замовлення 2476 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 347.63 грн |
| 10+ | 225.35 грн |
| 100+ | 148.98 грн |
| 500+ | 132.84 грн |
| 1000+ | 113.76 грн |
| 2500+ | 104.22 грн |
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Технічний опис STLD200N4F6AG STMicroelectronics
Description: MOSFET N-CH 40V 120A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 75A, 10V, Power Dissipation (Max): 158W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PowerFlat™ (5x6) Dual Side, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції STLD200N4F6AG
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STLD200N4F6AG | Виробник : STMicroelectronics |
Description: MOSFET N-CH 40V 120A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 75A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PowerFlat™ (5x6) Dual Side Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
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STLD200N4F6AG | Виробник : STMicroelectronics |
Description: MOSFET N-CH 40V 120A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 75A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PowerFlat™ (5x6) Dual Side Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |