STN6N60M2 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A SOT223-2
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2A, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
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Технічний опис STN6N60M2 STMicroelectronics
Description: MOSFET N-CH 600V 5.5A SOT223-2, Packaging: Tape & Reel (TR), Package / Case: TO-261-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2A, 10V, Power Dissipation (Max): 6W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V.
Інші пропозиції STN6N60M2 за ціною від 16.39 грн до 70.52 грн
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STN6N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 5.5A SOT223-2 Packaging: Cut Tape (CT) Package / Case: TO-261-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2A, 10V Power Dissipation (Max): 6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V |
на замовлення 4218 шт: термін постачання 21-31 дні (днів) |
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| STN6N60M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A SOT223-2
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2A, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
Description: MOSFET N-CH 600V 5.5A SOT223-2
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2A, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
на замовлення 4218 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 70.52 грн |
| 10+ | 42.24 грн |
| 100+ | 27.53 грн |
| 500+ | 19.91 грн |
| 1000+ | 18.00 грн |
| 2000+ | 16.39 грн |