STO60N045DM9

STO60N045DM9 STMicroelectronics


sto60n045dm9.pdf Виробник: STMicroelectronics
Description: N CHANNEL 600V 39 MOHM TYP 55A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 28A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TOLL (HV)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4675 pF @ 400 V
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Технічний опис STO60N045DM9 STMicroelectronics

Description: N CHANNEL 600V 39 MOHM TYP 55A, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 28A, 10V, Power Dissipation (Max): 245W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TOLL (HV), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4675 pF @ 400 V.

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STO60N045DM9 STO60N045DM9 Виробник : STMicroelectronics sto60n045dm9.pdf Description: N CHANNEL 600V 39 MOHM TYP 55A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 28A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TOLL (HV)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4675 pF @ 400 V
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STO60N045DM9 Виробник : STMicroelectronics sto60n045dm9.pdf N-channel 600 V, 39 mOhm typ., 55 A, MDmesh DM9 Power MOSFET in a TO-LL package
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