STO67N60M6 STMicroelectronics
Виробник: STMicroelectronicsDescription: MOSFET N-CH 600V 34A TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TOLL (HV)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
на замовлення 1770 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 472.09 грн |
| 10+ | 389.77 грн |
| 100+ | 324.79 грн |
| 500+ | 268.94 грн |
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Технічний опис STO67N60M6 STMicroelectronics
Description: MOSFET N-CH 600V 34A TOLL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TOLL (HV), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V.
Інші пропозиції STO67N60M6
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| STO67N60M6 | Виробник : STMicroelectronics |
Trans MOSFET N-CH 600V 34A 9-Pin(8+Tab) TO-LL HV T/R |
товар відсутній |
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| STO67N60M6 | Виробник : STMicroelectronics |
Trans MOSFET N-CH 600V 34A 9-Pin(8+Tab) TO-LL HV T/R |
товар відсутній |
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STO67N60M6 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 34A TOLL Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TOLL (HV) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V |
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STO67N60M6 | Виробник : STMicroelectronics |
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