Технічний опис STP10NK50Z STM
Description: MOSFET N-CH 500V 9A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 700mOhm @ 4.5A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: TO-220, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 39.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1219 pF @ 25 V.
Інші пропозиції STP10NK50Z
Фото | Назва | Виробник | Інформація |
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STP10NK50Z | Виробник : STMicroelectronics |
Description: MOSFET N-CH 500V 9A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 4.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 39.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1219 pF @ 25 V |
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STP10NK50Z | Виробник : STMicroelectronics | MOSFET N-Ch 500 V 0.55 Ohm 9 A SuperMESH |
товар відсутній |