STP16N60M2 STMicroelectronics
Виробник: STMicroelectronics
MOSFET N-channel 600 V, 0.28 Ohm typ 12 A MDmesh M2 Power MOSFET in TO-220 package
| Кількість | Ціна |
|---|---|
| 3+ | 156.94 грн |
| 10+ | 139.47 грн |
| 100+ | 97.58 грн |
| 500+ | 80.15 грн |
| 1000+ | 66.77 грн |
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Технічний опис STP16N60M2 STMicroelectronics
Description: MOSFET N-CH 600V 12A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V.
Інші пропозиції STP16N60M2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| STP16N60M2 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V |
товару немає в наявності |
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| STP16N60M2 | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7.6A; Idm: 48A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.6A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 48A Technology: MDmesh™ M2 Gate charge: 19nC |
товару немає в наявності |