STP18N65M2 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
| Кількість | Ціна |
|---|---|
| 2+ | 231.31 грн |
| 50+ | 111.37 грн |
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Технічний опис STP18N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V.
Інші пропозиції STP18N65M2 за ціною від 65.93 грн до 239.88 грн
| Фото | Назва | Виробник | Інформація |
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STP18N65M2 | Виробник : STMicroelectronics |
MOSFETs N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package |
на замовлення 853 шт: термін постачання 21-30 дні (днів) |
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| STP18N65M2 | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 8A; Idm: 48A; 110W Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Pulsed drain current: 48A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.33Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |