STP190N55LF3 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 55V 120A TO220-3
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 312W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
| Кількість | Ціна |
|---|---|
| 1+ | 385.78 грн |
| 50+ | 294.44 грн |
| 100+ | 252.39 грн |
| 500+ | 210.54 грн |
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Технічний опис STP190N55LF3 STMicroelectronics
Description: MOSFET N-CH 55V 120A TO220-3, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±18V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 312W (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V.
Інші пропозиції STP190N55LF3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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STP190N55LF3 | Виробник : STMicroelectronics |
MOSFETs N-Ch, 55V-2.9ohms 120A |
товару немає в наявності |