STP23NM60ND STM

Description: MOSFET N-CH 600V 19.5A TO220AB, Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).