STP28NM60ND STMicroelectronics

Description: MOSFET N-CH 600V 23A TO220, Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 190W (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Vgs (Max): ±25V.