STP2NK100Z STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 1000V 1.85A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 499 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 2+ | 293.25 грн |
| 50+ | 143.76 грн |
| 100+ | 130.30 грн |
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Технічний опис STP2NK100Z STMicroelectronics
Description: MOSFET N-CH 1000V 1.85A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 499 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 70W (Tc), Rds On (Max) @ Id, Vgs: 8.5Ohm @ 900mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції STP2NK100Z
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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STP2NK100Z | Виробник : STMicroelectronics |
MOSFETs N-Channel 1000V Zener SuperMESH |
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