STP2NK100Z STMicroelectronics
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Description: MOSFET N-CH 1000V 1.85A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 900mA, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 499 pF @ 25 V
на замовлення 403 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 216.38 грн |
50+ | 165.07 грн |
100+ | 141.5 грн |
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Технічний опис STP2NK100Z STMicroelectronics
Description: MOSFET N-CH 1000V 1.85A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc), Rds On (Max) @ Id, Vgs: 8.5Ohm @ 900mA, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 499 pF @ 25 V.
Інші пропозиції STP2NK100Z
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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STP2NK100Z | Виробник : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; Idm: 7.4A; 70W; TO220-3 Mounting: THT Case: TO220-3 Gate charge: 16nC Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 7.4A Drain-source voltage: 1kV Drain current: 1.6A On-state resistance: 8.5Ω Type of transistor: N-MOSFET Power dissipation: 70W Polarisation: unipolar Kind of package: tube кількість в упаковці: 1 шт |
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STP2NK100Z | Виробник : STMicroelectronics |
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товар відсутній |
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STP2NK100Z | Виробник : STMicroelectronics |
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товар відсутній |
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STP2NK100Z | Виробник : STMicroelectronics |
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товар відсутній |
|
STP2NK100Z | Виробник : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; Idm: 7.4A; 70W; TO220-3 Mounting: THT Case: TO220-3 Gate charge: 16nC Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 7.4A Drain-source voltage: 1kV Drain current: 1.6A On-state resistance: 8.5Ω Type of transistor: N-MOSFET Power dissipation: 70W Polarisation: unipolar Kind of package: tube |
товар відсутній |