STP4N90K5 STMicroelectronics
на замовлення 473 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 151.89 грн |
10+ | 90.14 грн |
100+ | 73.07 грн |
250+ | 69.08 грн |
500+ | 66.43 грн |
1000+ | 61.78 грн |
2000+ | 58.99 грн |
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Технічний опис STP4N90K5 STMicroelectronics
Description: MOSFET N-CH 900V 3A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 2.1Ohm @ 1A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 173 pF @ 100 V.
Інші пропозиції STP4N90K5
Фото | Назва | Виробник | Інформація |
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STP4N90K5 | Виробник : STMicroelectronics | Trans MOSFET N-CH 900V 3A 3-Pin(3+Tab) TO-220AB Tube |
товар відсутній |
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STP4N90K5 | Виробник : STMicroelectronics | Trans MOSFET N-CH 900V 3A 3-Pin(3+Tab) TO-220AB Tube |
товар відсутній |
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STP4N90K5 | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 1.9A; Idm: 12A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.9A Pulsed drain current: 12A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.1Ω Mounting: THT Gate charge: 5.3nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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STP4N90K5 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 900V 3A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 1A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 173 pF @ 100 V |
товар відсутній |
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STP4N90K5 | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 1.9A; Idm: 12A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.9A Pulsed drain current: 12A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.1Ω Mounting: THT Gate charge: 5.3nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |