STP50N65DM6 STMicroelectronics
Виробник: STMicroelectronics
MOSFETs N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-220 package
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Технічний опис STP50N65DM6 STMicroelectronics
Description: MOSFET N-CH 650V 33A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 91mOhm @ 16.5A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 52.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V.
Інші пропозиції STP50N65DM6
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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STP50N65DM6 | STMicroelectronics |
Trans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-220 Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
 |
STP50N65DM6 | STMicroelectronics |
Description: MOSFET N-CH 650V 33A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 91mOhm @ 16.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 52.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
 |
STP50N65DM6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 120A; 250W; TO220-3 Type of transistor: N-MOSFET Power dissipation: 250W Case: TO220-3 Mounting: THT Gate charge: 52.5nC Kind of package: tube Gate-source voltage: ±25V On-state resistance: 91mΩ Pulsed drain current: 120A Polarisation: unipolar Drain current: 33A Kind of channel: enhancement Drain-source voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. |
| STP50N65DM6 |
|
Виробник: STMicroelectronics
Trans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-220 Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STP50N65DM6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 33A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 91mOhm @ 16.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 52.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Description: MOSFET N-CH 650V 33A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 91mOhm @ 16.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 52.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STP50N65DM6 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 120A; 250W; TO220-3
Type of transistor: N-MOSFET
Power dissipation: 250W
Case: TO220-3
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Gate-source voltage: ±25V
On-state resistance: 91mΩ
Pulsed drain current: 120A
Polarisation: unipolar
Drain current: 33A
Kind of channel: enhancement
Drain-source voltage: 650V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 120A; 250W; TO220-3
Type of transistor: N-MOSFET
Power dissipation: 250W
Case: TO220-3
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Gate-source voltage: ±25V
On-state resistance: 91mΩ
Pulsed drain current: 120A
Polarisation: unipolar
Drain current: 33A
Kind of channel: enhancement
Drain-source voltage: 650V
товару немає в наявності
В кошику
од. на суму грн.