STP62NS04Z

Виробник: STM
MOSFET N-Ch 62A TO-220-3 Транзистори

Виробник: STMicroelectronics
Description: MOSFET N-CH 33V 62A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): Clamped
Drain to Source Voltage (Vdss): 33 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 25 V

Виробник: STMicroelectronics
MOSFETs N-Ch Clamped 62 Amp

Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - STP62NS04Z - Leistungs-MOSFET, n-Kanal, 33 V, 62 A, 0.0125 ohm, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 33V
rohsCompliant: YES
Dauer-Drainstrom Id: 62A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 110W
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0125ohm

Виробник: STMicroelectronics
Trans MOSFET N-CH 33V 62A 3-Pin(3+Tab) TO-220AB Tube