Технічний опис STP6N120K3 STMicroelectronics
Description: MOSFET N-CH 1200V 6A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-220, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 100 V.
Інші пропозиції STP6N120K3
| Фото | Назва | Виробник | Інформація |
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Ціна |
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| STP6N120K3 | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 1.2KV 6A 3-Pin(3+Tab) TO-220AB Tube |
товару немає в наявності |
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STP6N120K3 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 1200V 6A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 100 V |
товару немає в наявності |
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STP6N120K3 | Виробник : STMicroelectronics |
MOSFETs N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3 |
товару немає в наявності |