STP6N62K3 STMicroelectronics

Description: MOSFET N-CH 620V 5.5A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Drain to Source Voltage (Vdss): 620 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 90W (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.