STP8NK100Z

Виробник: STMicroelectronics
Description: MOSFET N-CH 1000V 6.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.85Ohm @ 3.15A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V

Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - STP8NK100Z - Leistungs-MOSFET, n-Kanal, 1 kV, 6.5 A, 1.85 ohm, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 1kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 6.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.75V
euEccn: NLR
Verlustleistung: 160W
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1.85ohm
SVHC: Lead (21-Jan-2025)

Виробник: STMicroelectronics
MOSFETs N-Ch 1000 V 1.60 Ohm Zener SuperMESH 6.5

Виробник: ST
N-MOSFET; 1000V; 1000V; 30V; 1,85Ohm; 6,5A; 160W; -55°C ~ 150°C; STP8NK100Z TSTP8NK100Z
кількість в упаковці: 10 шт