STPSC10065G2-TR STMicroelectronics
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 670pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 130 µA @ 650 V
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Технічний опис STPSC10065G2-TR STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 670pF @ 0V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: D2PAK, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A, Current - Reverse Leakage @ Vr: 130 µA @ 650 V.
Інші пропозиції STPSC10065G2-TR за ціною від 110.22 грн до 318.67 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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STPSC10065G2-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 10A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 670pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A Current - Reverse Leakage @ Vr: 130 µA @ 650 V |
на замовлення 1206 шт: термін постачання 21-31 дні (днів) |
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STPSC10065G2-TR | STMicroelectronics |
SiC Schottky Diodes 650 V power Schottky silicon carbide diode |
на замовлення 1133 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| STPSC10065G2-TR |
|
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 670pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 130 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 670pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 130 µA @ 650 V
на замовлення 1206 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 318.67 грн |
| 10+ | 202.13 грн |
| 100+ | 142.77 грн |
| 500+ | 110.22 грн |
| STPSC10065G2-TR |
|
Виробник: STMicroelectronics
SiC Schottky Diodes 650 V power Schottky silicon carbide diode
SiC Schottky Diodes 650 V power Schottky silicon carbide diode
на замовлення 1133 шт:
термін постачання 21-30 дні (днів)