Технічний опис STPSC1206D STM
Description: DIODE SIL CARB 600V 12A TO220AC, Current - Reverse Leakage @ Vr: 150 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 12A, Capacitance @ Vr, F: 750pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Інші пропозиції STPSC1206D
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STPSC1206D | Виробник : STMicroelectronics |
 Description: DIODE SIL CARB 600V 12A TO220ACCurrent - Reverse Leakage @ Vr: 150 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 12A Capacitance @ Vr, F: 750pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
товару немає в наявності |
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STPSC1206D | Виробник : STMicroelectronics |
SiC Schottky Diodes 12A 600V 12nC Schottky Carbide |
товару немає в наявності |