Технічний опис STPSC15H12DY STMicroelectronics
Description: DIODE SIL CARB 1.2KV 15A TO220AC, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 90 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Grade: Automotive, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 15A, Capacitance @ Vr, F: 1200pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Інші пропозиції STPSC15H12DY
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STPSC15H12DY | Виробник : STMicroelectronics |
 Description: DIODE SIL CARB 1.2KV 15A TO220ACQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 90 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A Voltage - DC Reverse (Vr) (Max): 1200 V Grade: Automotive Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 15A Capacitance @ Vr, F: 1200pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
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