STPSC16H065CT STMicroelectronics
| Кількість | Ціна |
|---|---|
| 1+ | 463.49 грн |
| 10+ | 411.18 грн |
| 100+ | 293.43 грн |
| 500+ | 249.52 грн |
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Технічний опис STPSC16H065CT STMicroelectronics
Description: DIODE ARR SIC SCHOTT 650V TO220, Current - Reverse Leakage @ Vr: 80 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: TO-220, Current - Average Rectified (Io) (per Diode): 8A, Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції STPSC16H065CT
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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STPSC16H065CT | Виробник : STMicroelectronics |
 Description: DIODE ARR SIC SCHOTT 650V TO220Current - Reverse Leakage @ Vr: 80 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-220 Current - Average Rectified (Io) (per Diode): 8A Diode Configuration: 1 Pair Common Cathode Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
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