STPSC20065GY-TR STMicroelectronics
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 150 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис STPSC20065GY-TR STMicroelectronics
Description: DIODE SIL CARBIDE 650V 20A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1250pF @ 0V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: D2PAK, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A, Current - Reverse Leakage @ Vr: 150 µA @ 600 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції STPSC20065GY-TR за ціною від 200.18 грн до 481.85 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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STPSC20065GY-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 20A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1250pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A Current - Reverse Leakage @ Vr: 150 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1623 шт: термін постачання 21-31 дні (днів) |
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STPSC20065GY-TR | STMicroelectronics |
SiC Schottky Diodes Automotive 650 V, 20 A SiC Power Schottky Diode |
на замовлення 814 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| STPSC20065GY-TR |
|
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 150 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARBIDE 650V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 150 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1623 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 481.85 грн |
| 10+ | 312.72 грн |
| 100+ | 227.04 грн |
| 500+ | 200.18 грн |
| STPSC20065GY-TR |
|
Виробник: STMicroelectronics
SiC Schottky Diodes Automotive 650 V, 20 A SiC Power Schottky Diode
SiC Schottky Diodes Automotive 650 V, 20 A SiC Power Schottky Diode
на замовлення 814 шт:
термін постачання 21-30 дні (днів)