STPSC20065W STMicroelectronics
| Кількість | Ціна |
|---|---|
| 1+ | 554.56 грн |
| 10+ | 395.15 грн |
| 100+ | 284.37 грн |
| 250+ | 269.73 грн |
| 600+ | 246.73 грн |
| 1200+ | 198.64 грн |
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Технічний опис STPSC20065W STMicroelectronics
Description: DIODE SIL CARBIDE 650V 20A DO247, Packaging: Tube, Package / Case: DO-247-2 (Straight Leads), Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1250pF @ 0V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: DO-247, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A, Current - Reverse Leakage @ Vr: 300 µA @ 650 V.
Інші пропозиції STPSC20065W
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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STPSC20065W | Виробник : STMicroelectronics |
 Description: DIODE SIL CARBIDE 650V 20A DO247Packaging: Tube Package / Case: DO-247-2 (Straight Leads) Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1250pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: DO-247 Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A Current - Reverse Leakage @ Vr: 300 µA @ 650 V |
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