STPSC30G065L2Y STMicroelectronics
Виробник: STMicroelectronics
Description: 650V 30A HIGH SURGE SILICON CARB
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1890pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: HU3PAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 575.76 грн |
| 10+ | 430.35 грн |
| 25+ | 399.43 грн |
| 100+ | 342.91 грн |
| 250+ | 327.70 грн |
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Технічний опис STPSC30G065L2Y STMicroelectronics
Description: 650V 30A HIGH SURGE SILICON CARB, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1890pF @ 0V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: HU3PAK, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A, Current - Reverse Leakage @ Vr: 300 µA @ 650 V, Qualification: AEC-Q101.
Інші пропозиції STPSC30G065L2Y
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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STPSC30G065L2Y | STMicroelectronics |
Description: 650V 30A HIGH SURGE SILICON CARB Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1890pF @ 0V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: HU3PAK Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A Current - Reverse Leakage @ Vr: 300 µA @ 650 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. |
| STPSC30G065L2Y |
|
Виробник: STMicroelectronics
Description: 650V 30A HIGH SURGE SILICON CARB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1890pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: HU3PAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
Qualification: AEC-Q101
Description: 650V 30A HIGH SURGE SILICON CARB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1890pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: HU3PAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику
од. на суму грн.