STPSC6H065BY-TR STMicroelectronics
Виробник: STMicroelectronicsSiC Schottky Diodes Automotive 650 V, 6 A High Surge Silicon Carbide Power Schottky Diode
на замовлення 1324 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 156.26 грн |
| 10+ | 122.70 грн |
| 100+ | 84.75 грн |
| 500+ | 74.16 грн |
| 1000+ | 73.55 грн |
| 2500+ | 69.01 грн |
| 10000+ | 66.36 грн |
Відгуки про товар
Написати відгук
Технічний опис STPSC6H065BY-TR STMicroelectronics
Description: DIODE SIL CARBIDE 650V 6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 300pF @ 0V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: DPAK, Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Current - Reverse Leakage @ Vr: 60 µA @ 650 V, Qualification: AEC-Q101.
Інші пропозиції STPSC6H065BY-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
STPSC6H065BY-TR | Виробник : STMicroelectronics |
Rectifier Diode Schottky SiC 650V 6A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
|
|
STPSC6H065BY-TR | Виробник : STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 6A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 0V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 60 µA @ 650 V Qualification: AEC-Q101 |
товару немає в наявності |
|
|
STPSC6H065BY-TR | Виробник : STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 6A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 0V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 60 µA @ 650 V Qualification: AEC-Q101 |
товару немає в наявності |
