STPSC6H12B-TR1 STMicroelectronics
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 1200V 6A DPAK
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 330pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис STPSC6H12B-TR1 STMicroelectronics
Description: DIODE SIL CARBIDE 1200V 6A DPAK, Current - Reverse Leakage @ Vr: 400 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: DPAK, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 330pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції STPSC6H12B-TR1 за ціною від 99.63 грн до 280.18 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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STPSC6H12B-TR1 | STMicroelectronics |
Description: DIODE SIL CARBIDE 1200V 6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 330pF @ 0V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A Current - Reverse Leakage @ Vr: 400 µA @ 1200 V |
на замовлення 7403 шт: термін постачання 21-31 дні (днів) |
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STPSC6H12B-TR1 | STMicroelectronics |
SiC Schottky Diodes 1200V 6A Schottky 1.55V Vf 30pF 29nC |
на замовлення 2066 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| STPSC6H12B-TR1 |
|
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 1200V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 330pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Description: DIODE SIL CARBIDE 1200V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 330pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
на замовлення 7403 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 280.18 грн |
| 10+ | 173.15 грн |
| 100+ | 135.04 грн |
| 500+ | 104.94 грн |
| 1000+ | 99.63 грн |
| STPSC6H12B-TR1 |
|
Виробник: STMicroelectronics
SiC Schottky Diodes 1200V 6A Schottky 1.55V Vf 30pF 29nC
SiC Schottky Diodes 1200V 6A Schottky 1.55V Vf 30pF 29nC
на замовлення 2066 шт:
термін постачання 21-30 дні (днів)