STPSC806G-TR STMicroelectronics
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 600V 8A D2PAK
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D²PAK
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 450pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
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Технічний опис STPSC806G-TR STMicroelectronics
Description: DIODE SIL CARBIDE 600V 8A D2PAK, Current - Reverse Leakage @ Vr: 100 µA @ 600 V, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: D²PAK, Current - Average Rectified (Io): 8A, Capacitance @ Vr, F: 450pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A.
Інші пропозиції STPSC806G-TR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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STPSC806G-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 600V 8A D2PAK Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: D²PAK Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 450pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. |
 |
STPSC806G-TR | STMicroelectronics |
SiC Schottky Diodes 600V Power Schottky 8A 10 nC No Reverse |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| STPSC806G-TR |
|
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 600V 8A D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D²PAK
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 450pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Description: DIODE SIL CARBIDE 600V 8A D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D²PAK
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 450pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| STPSC806G-TR |
|
Виробник: STMicroelectronics
SiC Schottky Diodes 600V Power Schottky 8A 10 nC No Reverse
SiC Schottky Diodes 600V Power Schottky 8A 10 nC No Reverse
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.