STQ1NK60ZR-AP

Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 300MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 15Ohm @ 400mA, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 25 V

Виробник: STMicroelectronics
Trans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Ammo

Виробник: STMicroelectronics
Trans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Ammo

Виробник: STMicroelectronics
Trans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Ammo

Виробник: STMicroelectronics
Trans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Ammo

Виробник: STMicroelectronics
Trans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Ammo

Виробник: STMicroelectronics
Trans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Ammo

Виробник: STMicroelectronics
Trans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Ammo

Виробник: STMicroelectronics
Trans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Ammo

Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 300mA; Idm: 0.189A; 3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.3A
Power dissipation: 3W
Case: TO92 Formed
On-state resistance: 15Ω
Mounting: THT
Gate charge: 4.9nC
Pulsed drain current: 0.189A
Kind of channel: enhancement
Gate-source voltage: ±30V
Kind of package: Ammo Pack

Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 300MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 15Ohm @ 400mA, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 25 V

Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - STQ1NK60ZR-AP - Leistungs-MOSFET, n-Kanal, 600 V, 400 mA, 13 ohm, TO-92, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 400mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.75V
euEccn: NLR
Verlustleistung: 3W
Bauform - Transistor: TO-92
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 13ohm
SVHC: No SVHC (25-Jun-2025)

Виробник: STMicroelectronics
MOSFETs N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH(TM) Power MOSFET i

Виробник: ST
Transistor N-Channel MOSFET; 600V; 30V; 15Ohm; 300mA; 3W; -55°C~150°C; STQ1NK60ZR-AP STMicroelectronics TSTQ1NK60ZR-AP
кількість в упаковці: 50 шт