STQ2NK60ZR-AP STMicroelectronics

Description: MOSFET N-CH 600V 400MA TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 3W (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 700mA, 10V, Current - Continuous Drain (Id) @ 25°C: 400mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Box (TB).