STR1P2UH7 STMicroelectronics

Description: MOSFET P-CH 20V 1.4A SOT-23, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Obsolete, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 350mW (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 700mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).