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STS1HNK60 STM


en.CD00003349.pdf Виробник: STM

на замовлення 26666 шт:

термін постачання 14-28 дні (днів)
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Технічний опис STS1HNK60 STM

Description: MOSFET N-CH 600V 300MA 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Tc), Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V, Power Dissipation (Max): 2W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V.

Інші пропозиції STS1HNK60

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STS1HNK60 Виробник : STM en.CD00003349.pdf 2004 SOP
на замовлення 1278 шт:
термін постачання 14-28 дні (днів)
STS1HNK60 STS1HNK60 Виробник : STMicroelectronics en.CD00003349.pdf Description: MOSFET N-CH 600V 300MA 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V
товар відсутній
STS1HNK60 STS1HNK60 Виробник : STMicroelectronics en.CD00003349.pdf Description: MOSFET N-CH 600V 300MA 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V
товар відсутній