Технічний опис STS1HNK60 STM
Description: MOSFET N-CH 600V 300MA 8SO, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3.7V @ 250µA, Power Dissipation (Max): 2W (Tc), Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 300mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ).
Інші пропозиції STS1HNK60
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| STS1HNK60 | Виробник : STM |
 N-кан. 600V - 8 Ом - 0.3A SO-8 SuperMESH Power MOSFET Група товару: Транзистори Од. вим: шт |
товару немає в наявності |
||
 |
STS1HNK60 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 300MA 8SO Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3.7V @ 250µA Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 150°C (TJ) |
товару немає в наявності |
|
|
|
STS1HNK60 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 300MA 8SO Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3.7V @ 250µA Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |