STT5N2VH5 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 20V SOT23-6
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 14.21 грн |
| 6000+ | 12.56 грн |
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Технічний опис STT5N2VH5 STMicroelectronics
Description: STMICROELECTRONICS - STT5N2VH5 - Leistungs-MOSFET, n-Kanal, 20 V, 5 A, 0.025 ohm, SOT-23, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 700mV, Verlustleistung: 1.6W, SVHC: No SVHC (23-Jan-2024), Bauform - Transistor: SOT-23, Anzahl der Pins: 6Pin(s), Produktpalette: STripFET V Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 4.5V, Drain-Source-Durchgangswiderstand: 0.025ohm.
Інші пропозиції STT5N2VH5 за ціною від 14.94 грн до 59.44 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STT5N2VH5 | STMicroelectronics |
Description: MOSFET N-CH 20V SOT23-6 Current - Continuous Drain (Id) @ 25°C: 5A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Not For New Designs Supplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V |
на замовлення 10626 шт: термін постачання 21-31 дні (днів) |
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STT5N2VH5 | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STT5N2VH5 - Leistungs-MOSFET, n-Kanal, 20 V, 5 A, 0.025 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 700mV Verlustleistung: 1.6W SVHC: No SVHC (23-Jan-2024) Bauform - Transistor: SOT-23 Anzahl der Pins: 6Pin(s) Produktpalette: STripFET V Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 0.025ohm |
на замовлення 1084 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||
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STT5N2VH5 | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STT5N2VH5 - Leistungs-MOSFET, n-Kanal, 20 V, 5 A, 0.025 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 700mV Verlustleistung: 1.6W SVHC: No SVHC (23-Jan-2024) Bauform - Transistor: SOT-23 Anzahl der Pins: 6Pin(s) Produktpalette: STripFET V Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 0.025ohm |
на замовлення 1084 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| STT5N2VH5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 20V SOT23-6
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Description: MOSFET N-CH 20V SOT23-6
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
на замовлення 10626 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.44 грн |
| 10+ | 35.77 грн |
| 100+ | 23.12 грн |
| 500+ | 16.59 грн |
| 1000+ | 14.94 грн |
| STT5N2VH5 |
|
Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - STT5N2VH5 - Leistungs-MOSFET, n-Kanal, 20 V, 5 A, 0.025 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 700mV
Verlustleistung: 1.6W
SVHC: No SVHC (23-Jan-2024)
Bauform - Transistor: SOT-23
Anzahl der Pins: 6Pin(s)
Produktpalette: STripFET V Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 0.025ohm
Description: STMICROELECTRONICS - STT5N2VH5 - Leistungs-MOSFET, n-Kanal, 20 V, 5 A, 0.025 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 700mV
Verlustleistung: 1.6W
SVHC: No SVHC (23-Jan-2024)
Bauform - Transistor: SOT-23
Anzahl der Pins: 6Pin(s)
Produktpalette: STripFET V Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 0.025ohm
на замовлення 1084 шт:
термін постачання 21-31 дні (днів)
| STT5N2VH5 |
|
Виробник: STMICROELECTRONICS
Description: STMICROELECTRONICS - STT5N2VH5 - Leistungs-MOSFET, n-Kanal, 20 V, 5 A, 0.025 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 700mV
Verlustleistung: 1.6W
SVHC: No SVHC (23-Jan-2024)
Bauform - Transistor: SOT-23
Anzahl der Pins: 6Pin(s)
Produktpalette: STripFET V Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 0.025ohm
Description: STMICROELECTRONICS - STT5N2VH5 - Leistungs-MOSFET, n-Kanal, 20 V, 5 A, 0.025 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 700mV
Verlustleistung: 1.6W
SVHC: No SVHC (23-Jan-2024)
Bauform - Transistor: SOT-23
Anzahl der Pins: 6Pin(s)
Produktpalette: STripFET V Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 0.025ohm
на замовлення 1084 шт:
термін постачання 21-31 дні (днів)