Технічний опис STTA112U ST
Description: DIODE GEN PURP 1.2KV 1A SMB, Current - Reverse Leakage @ Vr: 10 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: 125°C (Max), Supplier Device Package: SMB, Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 115 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AA, SMB, Packaging: Tape & Reel (TR).
Інші пропозиції STTA112U
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| STTA112U | Виробник : STM |
 Група товару: Діоди та діодні збірки Од. вим: шт |
товару немає в наявності |
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STTA112U | Виробник : STMicroelectronics |
Description: DIODE GEN PURP 1.2KV 1A SMB Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SMB Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 115 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
товару немає в наявності |
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STTA112U | Виробник : STMicroelectronics |
Description: DIODE GEN PURP 1.2KV 1A SMB Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SMB Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 115 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
товару немає в наявності |