Технічний опис STTH1212G-TR STM
Description: DIODE GEN PURP 1.2KV 12A D2PAK, Current - Reverse Leakage @ Vr: 10 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 12 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: D2PAK, Current - Average Rectified (Io): 12A, Technology: Standard, Reverse Recovery Time (trr): 100 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції STTH1212G-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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STTH1212G-TR | Виробник : STMicroelectronics |
 Description: DIODE GEN PURP 1.2KV 12A D2PAKCurrent - Reverse Leakage @ Vr: 10 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 12 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: D2PAK Current - Average Rectified (Io): 12A Technology: Standard Reverse Recovery Time (trr): 100 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |