Технічний опис STTH1R02RL STM
Description: DIODE GEN PURP 200V 1.5A DO41, Current - Reverse Leakage @ Vr: 3 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: DO-41, Current - Average Rectified (Io): 1.5A, Technology: Standard, Reverse Recovery Time (trr): 30 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-204AL, DO-41, Axial, Packaging: Tape & Reel (TR).
Інші пропозиції STTH1R02RL
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STTH1R02RL | Виробник : STMicroelectronics |
 Description: DIODE GEN PURP 200V 1.5A DO41Current - Reverse Leakage @ Vr: 3 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DO-41 Current - Average Rectified (Io): 1.5A Technology: Standard Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
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STTH1R02RL | Виробник : STMicroelectronics |
Description: DIODE GEN PURP 200V 1.5A DO41 Current - Reverse Leakage @ Vr: 3 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DO-41 Current - Average Rectified (Io): 1.5A Technology: Standard Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Cut Tape (CT) |
товару немає в наявності |
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STTH1R02RL | Виробник : STMicroelectronics |
Rectifiers Recovery Diode Ultra Fast |
товару немає в наявності |