STTH4R06DEE-TR STMicroelectronics
Виробник: STMicroelectronics
Diodes - General Purpose, Power, Switching Turbo 2 Ultrafst REC 4A 600V 1.0V VF 30ns
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Технічний опис STTH4R06DEE-TR STMicroelectronics
Description: DIODE GEN PURP 600V 4A POWERFLAT, Current - Reverse Leakage @ Vr: 3 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: PowerFlat™ (3.3x3.3), Current - Average Rectified (Io): 4A, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції STTH4R06DEE-TR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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STTH4R06DEE-TR | Виробник : STMicroelectronics |
Description: DIODE GEN PURP 600V 4A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: PowerFlat™ (3.3x3.3) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
товару немає в наявності |
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STTH4R06DEE-TR | Виробник : STMicroelectronics |
Description: DIODE GEN PURP 600V 4A POWERFLAT Current - Reverse Leakage @ Vr: 3 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PowerFlat™ (3.3x3.3) Current - Average Rectified (Io): 4A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |