STTH4R06DEE-TR STMicroelectronics

Description: DIODE GEN PURP 600V 4A POWERFLAT, Current - Reverse Leakage @ Vr: 3 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: PowerFlat™ (3.3x3.3), Current - Average Rectified (Io): 4A, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).