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Технічний опис STU2LN60K3 STMicroelectronics
Description: MOSFET N CH 600V 2A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-251 (IPAK), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Інші пропозиції STU2LN60K3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| STU2LN60K3 | STM |
 MOSFET N-Ch 600 V 4 Ohm 2 A SuperMESH3, TO-251-3 Транзистори |
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В кошику од. на суму грн. | |
 |
STU2LN60K3 | STMicroelectronics |
Description: MOSFET N CH 600V 2A IPAK Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-251 (IPAK) Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| STU2LN60K3 |
|
Виробник: STM
MOSFET N-Ch 600 V 4 Ohm 2 A SuperMESH3, TO-251-3 Транзистори
MOSFET N-Ch 600 V 4 Ohm 2 A SuperMESH3, TO-251-3 Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| STU2LN60K3 |
|
Виробник: STMicroelectronics
Description: MOSFET N CH 600V 2A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N CH 600V 2A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.