STU3N80K5 STMicroelectronics
| Кількість | Ціна |
|---|---|
| 3+ | 110.55 грн |
| 10+ | 88.14 грн |
| 100+ | 60.41 грн |
| 500+ | 51.21 грн |
| 1000+ | 39.92 грн |
| 3000+ | 38.95 грн |
| 6000+ | 37.27 грн |
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Технічний опис STU3N80K5 STMicroelectronics
Description: MOSFET N-CH 800V 2.5A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-251 (IPAK), Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Інші пропозиції STU3N80K5
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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STU3N80K5 | Виробник : STMicroelectronics |
 Description: MOSFET N-CH 800V 2.5A IPAKInput Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-251 (IPAK) Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
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