Технічний опис STU4N62K3 STMicroelectronics
Description: MOSFET N-CH 620V 3.8A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-251 (IPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 620 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V.
Інші пропозиції STU4N62K3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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STU4N62K3 | STMicroelectronics |
 Description: MOSFET N-CH 620V 3.8A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-251 (IPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V |
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| STU4N62K3 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 620V; 3.8A; 70W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 620V Drain current: 3.8A Power dissipation: 70W Case: IPAK; TO251 On-state resistance: 2Ω Mounting: THT Gate charge: 22nC Kind of channel: enhancement |
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В кошику од. на суму грн. |
| STU4N62K3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 620V 3.8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
Description: MOSFET N-CH 620V 3.8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
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В кошику
од. на суму грн.
| STU4N62K3 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 620V; 3.8A; 70W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 620V
Drain current: 3.8A
Power dissipation: 70W
Case: IPAK; TO251
On-state resistance: 2Ω
Mounting: THT
Gate charge: 22nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 620V; 3.8A; 70W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 620V
Drain current: 3.8A
Power dissipation: 70W
Case: IPAK; TO251
On-state resistance: 2Ω
Mounting: THT
Gate charge: 22nC
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.