STU5N95K5 STMicroelectronics


en.DM00084492.pdf Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 3.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V
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Технічний опис STU5N95K5 STMicroelectronics

Description: MOSFET N-CH 950V 3.5A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.5A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-251 (IPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V.

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STU5N95K5 Виробник : STMicroelectronics std5n95k5-1850474.pdf MOSFET N-channel 950 V, 2 Ohm typ 3.5 A MDmesh K5 Power MOSFET in an IPAK package
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