Технічний опис STU60N3LH5 STMicroelectronics
Description: MOSFET N-CH 30V 48A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 24A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: IPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V.
Інші пропозиції STU60N3LH5
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STU60N3LH5 | Виробник : STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 24A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V |
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STU60N3LH5 | Виробник : STMicroelectronics |
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товару немає в наявності |