Технічний опис STV160NF03LAT4 ST
Description: MOSFET N-CH 30V 160A 10POWERSO, Packaging: Tape & Reel (TR), Package / Case: PowerSO-10 Exposed Bottom Pad, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V, Power Dissipation (Max): 210W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 10-PowerSO, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 25 V.
Інші пропозиції STV160NF03LAT4
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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STV160NF03LAT4 | Виробник : STMicroelectronics |
 Description: MOSFET N-CH 30V 160A 10POWERSOPackaging: Tape & Reel (TR) Package / Case: PowerSO-10 Exposed Bottom Pad Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 10-PowerSO Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 25 V |
товар відсутній |